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Número de pieza | EMB45N06A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB45N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
45mΩ
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/10/25
EMB45N06A
LIMITS
±20
18
12
50
15
11.25
5.6
33
13.5
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.7
80
UNIT
°C / W
p.1
1 page EMB45N06A
Gate Charge Characteristics
10
I D = 13A
8
V D S = 15V 30V
6
4
2
0
0 3 6 9 12 15 18 21
Q g ‐ Gate Charge( nC )
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
10 20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
300
MAXIMUM SAFE OPERATING AREA
100
50 R d s (o n ) Limit
10μ s
10
1
VG S = 10V
RSIθ N J C G= L3E. 7P° UC/LWSE
Tc = 25 °C
0.3
100μ s
1ms
10ms
1D0C0ms
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3.7°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time (sec)
100 1000
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
0.02
0.03
0.01
0.02
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3.7°C/W
Single Pulse
3.TJ ‐ TC = P * R θ J C (t)
0.01
4.Rθ J C (t)=r(t) * RθJC
10‐2 10‐1
1
10 100
t 1 ,Time ( mSEC )
1000
2012/10/25
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB45N06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB45N06A | Field Effect Transistor | Excelliance MOS |
EMB45N06G | Field Effect Transistor | Excelliance MOS |
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