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PDF EMB50N10A Data sheet ( Hoja de datos )
| Número de pieza | EMB50N10A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
50mΩ
ID 25A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/3/26
EMB50N10A
LIMITS
±20
25
17
100
25
31.25
15.6
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.0
75
UNIT
°C / W
p.1
1 page  
EMB50N10A
Gate Charge Characteristics
10
I D = 25A
8
VD S = 25V
50V
6
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
4000
3000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
2000
1000
0
0
Coss
Crss
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
103
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
3000
SRθi n JC g =le 3 P.0u° Cls/eW
TC = 25° C
2500
102 RDS(ON) Limited
10μs
100μs
101
1ms
10ms
100
DC
TC=25°C
RθJC=3.0°C/W
Vgs=10V
Single Pulse
10‐1
100 101
102
VDS, Drain‐Source Voltage( V )
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=3.0°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/3/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB50N10A.PDF ] | |
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