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Numéro de référence | EMBB0N10A | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
220mΩ
ID 7A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=5A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/8/30
EMBB0N10A
LIMITS
±20
7
5
28
5
1.25
0.625
25
10
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
5
62.5
UNIT
°C / W
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMBB0N10A ] |
No | Description détaillée | Fabricant |
EMBB0N10A | Field Effect Transistor | Excelliance MOS |
EMBB0N10J | Field Effect Transistor | Excelliance MOS |
EMBB0N10V | Field Effect Transistor | Excelliance MOS |
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