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PDF EMB35C04A Data sheet ( Hoja de datos )
| Número de pieza | EMB35C04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
N‐CH
40V
35mΩ
P‐CH
‐40V
44mΩ
D1
G1
ID
12A ‐9A
S1
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
D2
G2
S2
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/11/27
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB35C04A
LIMITS
N‐CH
P‐CH
±20 ±20
12 ‐9
8 ‐6
48 ‐36
21
8.3
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
6
42
UNIT
°C / W
p.1
1 page  
N‐Channel
50
VG S = 10V
On‐Region Characteristics
40
8.0V
7.0V
30
20
10
0
0
24
68
VD S ‐ Drain‐Source Voltage( V )
10
On‐Resistance Variation with Temperature
1.9
I D = 10A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (° C)
30
Transfer Characteristics
VD S = 10V
25
T A = ‐55° C
20
15
25° C
10
125° C
5
0
12
34
VG S ‐ Gate‐to‐Source Voltage(V)
5
2012/11/27
EMB35C04A
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4 VG S = 7.0 V
1.2
1.0
8.0 V
10 V
0.8
0
10 20 30 40 50
I D ‐ Drain Current(A)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 10 A
TA = 125°C
TA = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation with
100 Source Current and Temperature
V G S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage(V)
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB35C04A.PDF ] | |
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