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PDF SVS6N80D Data sheet ( Hoja de datos )
| Número de pieza | SVS6N80D | |
| Descripción | TRANSISTOR | |
| Fabricantes | Silan Microelectronics | |
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SVS6N80T/D/F_Datasheet
6A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS6N80T/D/F is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS6N80T
SVS6N80D
SVS6N80DTR
SVS6N80F
Package
TO-220-3L
TO-252-2L
TO-252-2L
TO-220F-3L
Marking
SVS6N80T
SVS6N80D
SVS6N80D
SVS6N80F
Material
Pb free
Halogen free
Halogen free
Pb free
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVS6N80T
110
0.88
Ratings
SVS6N80D
800
±30
6.0
4
24
82
0.66
250
-55～+150
-55～+150
Packing
Tube
Tube
Tape & Reel
Tube
SVS6N80F
33
0.26
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 8
1 page  
Silan
Microelectronics
TYPICAL TEST CIRCUIT
SVS6N80T/D/F_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
as DUT
VGS
50KΩ
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
3mA
DUT
Charge
Resistive Switching Test Circuit & Waveform
10V
VDS
VGS
RG
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVS6N80D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVS6N80D | TRANSISTOR | Silan Microelectronics |
| SVS6N80F | TRANSISTOR | Silan Microelectronics |
| SVS6N80T | TRANSISTOR | Silan Microelectronics |
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