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PDF SVS4N80D Data sheet ( Hoja de datos )
| Número de pieza | SVS4N80D | |
| Descripción | TRANSISTOR | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
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Silan
Microelectronics
SVS4N80D/T_Datasheet
4A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS4N80D is an N-channel enhancement mode high voltage power
MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
1
3
1.Gate 2.Drain 3.Source
FEATURES
4A,800V, RDS(on)(typ.)=1.1Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
123
TO-220-3L
TO-252-2L
ORDERING INFORMATION
Part No.
SVS4N80D
SVS4N80DTR
SVS4N80T
Package
TO-252-2L
TO-252-2L
TO-220-3L
Marking
SVS4N80D
SVS4N80D
SVS4N80T
Material
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape & Reel
Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Symbol
Ratings
SVS4N80D
SVS4N80T
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
800
±30
4
1.6
16
56 80
0.45 0.64
210
-55~+150
-55~+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:0.2
Page 1 of 7
1 page  
Silan
Microelectronics
TYPICAL TEST CIRCUIT
SVS4N80D/T_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
as DUT
VGS
50KΩ
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
3mA
DUT
Charge
Resistive Switching Test Circuit & Waveform
10V
VDS
VGS
RG
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:0.2
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SVS4N80D.PDF ] | |
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