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PDF SVF9NE80F Data sheet ( Hoja de datos )

Número de pieza SVF9NE80F
Descripción MOSFET ( Transistor )
Fabricantes Silan Microelectronics 
Logotipo Silan Microelectronics Logotipo



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SVF9NE80F_Datasheet
9A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF9NE80F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
9A,800V,RDS(on)(typ.)=0.78Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF9NE80F
Package
TO-220F-3L
Marking
SVF9NE80F
Material
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3
2011.11.23
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SVF9NE80F pdf
PACKAGE OUTLINE
TO-220F-3L
SVF9NE80F_Datasheet
UNIT: mm
Disclaimer :
Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3
2011.11.23
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