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Numéro de référence | GS66504B | ||
Description | 650V enhancement mode GaN transistor | ||
Fabricant | GaN Systems | ||
Logo | |||
1 Page
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features
– 650V enhancement mode power switch
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Integral source sense
– Zero reverse recovery loss
– RoHS 6 compliant
Applications
– On-board battery chargers
– Appliance and motor inverters and IPMs
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
top view
D
GS
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Thermal Resistance (junction to case)
Maximum Soldering Temperature (MSL3 rated)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
GS66502B GS66504B
7 15
5 11
15 30
Units
°C
°C
V
V
A
A
A
Symbol
RΘJC
TSOLD
Value
GS66502B GS66504B
21
260
Units
°C /W
°C
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
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Pages | Pages 3 | ||
Télécharger | [ GS66504B ] |
No | Description détaillée | Fabricant |
GS66504B | 650V enhancement mode GaN transistor | GaN Systems |
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