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GaN Systems - 650V enhancement mode GaN transistor

Numéro de référence GS66504B
Description 650V enhancement mode GaN transistor
Fabricant GaN Systems 
Logo GaN Systems 





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GS66504B fiche technique
GS66502B, GS66504B
650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features
650V enhancement mode power switch
Ultra low FOM Island Technologydie
Low inductance GaNPXpackage
Reverse current capability
Integral source sense
Zero reverse recovery loss
RoHS 6 compliant
Applications
On-board battery chargers
Appliance and motor inverters and IPMs
AC-DC power supplies (PFC & primary)
VHF small form factor power adapters
High frequency, high efficiency power
conversion
top view
D
GS
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Thermal Resistance (junction to case)
Maximum Soldering Temperature (MSL3 rated)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
GS66502B GS66504B
7 15
5 11
15 30
Units
°C
°C
V
V
A
A
A
Symbol
RΘJC
TSOLD
Value
GS66502B GS66504B
21
260
Units
°C /W
°C
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.

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