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GA040TH65-CAU fiches techniques PDF

GeneSiC - Silicon Carbide Thyristor

Numéro de référence GA040TH65-CAU
Description Silicon Carbide Thyristor
Fabricant GeneSiC 
Logo GeneSiC 





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GA040TH65-CAU fiche technique
Silicon Carbide Thyristor
Features
6500 V Asymmetric SiC NPNP Thyristor
250 °C operating temperature
Fast turn on characteristics
Lowest in class Qrr/IT(AVM)
Applications
Grid Tied Solar Inverters
Wind Power Inverters
HVDC Power Conversion
Utility Scale Power Conversion
 Trigger Circuits/Ignition Circuits
Maximum Ratings
Parameter
Repetitive peak forward voltage
Repetitive peak reverse voltage
Maximum average on-state current
RMS on-state current
Operating and storage temperature
Electrical Characteristics
Parameter
Maximum peak on state voltage
Anode-cathode threshold voltage
Anode-cathode slope resistance
Leakage current
Gate trigger current
Holding current
Rise time
Delay time
Reverse recovery charge
Recovered charge, 50% chord
Reverse recovery current
Circuit commutated turn-off time
Electrical Datasheet GA040TH65-CAU
VFBM
IT(AVM)
Qrr
= 6500 V
= 40 A
= 1.8 µC
Symbol
VFBM
VRBM
IT(AVM)
IT(RMS)
Tj, Tstg
Conditions
Tj = 25 °C
Tj = 25 °C
TC 120 °C
TC 120 °C
Values
6500
50
40
69
-55 to 250
Unit
V
V
A
A
°C
Symbol
VKA(ON)
VKA(TO)
RAK
IL
IGT
IH
tR
tD
Qrr
Qra
Irm
tq
Conditions
IK = -40 A, Tj = 25 °C
IK = -40 A, Tj = 150 °C
Tj = 25 °C (150 °C)
Tj = 25 °C (150 °C), IK = -40 A
VKA = -6500 V, VGA = 0 V, Tj = 25 °C
VKA = -6500 V, VGA = 0 V, Tj = 150 °C
Tj = 25 °C, tP = 10 µs
Tj = 25 °C
IG = -3 A, VKA = -2500 V
IK = -40 A, Tj = 25 °C
dI/dt = 270 A/us, IK = -40 A, VKA = 20 V
dV/dt(re-app) = -500 V/us, Tj = 25 °C
min.
Values
typ.
-4.30
-3.90
-3.1(-2.8)
20(21)
15
30
-30
780
200
40
1.8
0.6
11
4.7
max.
Unit
V
V
m
µA
mA
mA
ns
ns
µC
µC
A
µs
November 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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