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GA03JT12-247 fiches techniques PDF

GeneSiC - Junction Transistor

Numéro de référence GA03JT12-247
Description Junction Transistor
Fabricant GeneSiC 
Logo GeneSiC 





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GA03JT12-247 fiche technique
 
Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA03JT12-247
VDS
RDS(ON)
ID @ Tc=150°C
hFE Tc=25°C
=
=
=
=
1200 V
470 m
3A
54
D
DS
G
G
S
TO-247AB
 
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 150 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 150 °C
Value
1200
3
1
ID,max = 3
@ VDS VDSmax
20
30
25
15
-55 to 175
Unit
V
A
A
A
Notes
Fig. 6
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics 
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics 
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 3 A, Tj = 25 °C
ID = 3 A, Tj = 125 °C
ID = 3 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 3 A, Tj = 25 °C
VDS = 5 V, ID = 3 A, Tj = 175 °C
470
530 mFig. 5
730
3.3
3.1
V Fig. 4
54
32
– Fig. 5
VR = 1200 V, VGS = 0 V, Tj = 25 °C
IDSS VR = 1200 V, VGS = 0 V, Tj = 125 °C
VR = 1200 V, VGS = 0 V, Tj = 175 °C
ISG VSG = 20 V, Tj = 25 °C
0.1 10
0.2
50 μA
Fig. 6
0.5 100
20 nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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