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PDF 2N7636-GA Data sheet ( Hoja de datos )
| Número de pieza | 2N7636-GA | |
| Descripción | Junction Transistor | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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2N7636-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Electrically Isolated Base Plate
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
425 mΩ
10 A
110
S
G
D
G
SMD0.5 / TO – 276 (Hermetic Package)
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
D
S
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7636-GA ..................................................................................................................6
Section VI: Package Dimensions ....................................................................................................................9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25 °C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 400 V,
Non Repetitive
TC = 25 °C, tp > 100 ms
Value
600
10
0.5
ID,max = 10
@ VDS ≤ VDSmax
>20
30
25
125
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 9
1 page  
2N7636-GA
Figure 13: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 14: Turn-Off Safe Operating Area
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2N7636-GA.PDF ] | |
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