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SemiHow - N-Channel MOSFET

Numéro de référence HFP3N90
Description N-Channel MOSFET
Fabricant SemiHow 
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HFP3N90 fiche technique
Oct 2016
HFP3N90 / HFS3N90
900V N-Channel MOSFET
Features
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
900
3
5
17
HFP3N90
TO-220
HFS3N90
TO-220F
Symbol
Unit
V
A
ȍ
nC
S
D
G
S
D
G
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
3.0 3.0 *
1.9 1.9 *
12 12 *
ρ30
200
3.0
10.7
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
107
0.85
39
0.31
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
1.17
0.5
62.5
TO-220F
3.2
--
62.5
Unit
/W
/W
/W
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