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SemiHow - N-Channel MOSFET

Numéro de référence HFD5N60U
Description N-Channel MOSFET
Fabricant SemiHow 
Logo SemiHow 





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HFD5N60U fiche technique
HFD5N60U / HFU5N60U
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 10.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 2.0 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Jan 2014
BVDSS = 600 V
RDS(on) typ = 2.0 ȍ
ID = 3.6 A
D-PAK I-PAK
2
1
3
HFD5N60U
1
2
3
HFU5N60U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
3.6
2.3
14.4
ρ30
163
3.6
8.0
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
80
0.64
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.59
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͥ͑͢͡

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