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Toshiba - MOSFET ( Transistor ) - 2SK3543

Numéro de référence K3543
Description MOSFET ( Transistor ) - 2SK3543
Fabricant Toshiba 
Logo Toshiba 





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K3543 fiche technique
2SK3543
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3543
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
· High forward transfer admittance: |Yfs| = 1.3 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
2
5
30
103
2
3
150
-55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17
62.5
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 W, IAR = 2 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-04

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