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CAT28LV64W-25T fiches techniques PDF

Catalyst Semiconductor - 64K-Bit CMOS PARALLEL EEPROM

Numéro de référence CAT28LV64W-25T
Description 64K-Bit CMOS PARALLEL EEPROM
Fabricant Catalyst Semiconductor 
Logo Catalyst Semiconductor 





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CAT28LV64W-25T fiche technique
CAT28LV64
64K-Bit CMOS PARALLEL EEPROM
FEATURES
3.0V to 3.6 V Supply
Read access times:
– 150/200/250ns
Low power CMOS dissipation:
– Active: 8 mA max.
– Standby: 100 µA max.
Simple write operation:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
Fast write cycle time:
– 5ms max.
Commercial, industrial and automotive
temperature ranges
ALOGEN FR
LEA D F REETM
CMOS and TTL compatible I/O
Automatic page write operation:
– 1 to 32 bytes in 5ms
– Page load timer
End of write detection:
– Toggle bit
DATA polling
Hardware and software write protection
100,000 program/erase cycles
100 year data retention
DESCRIPTION
The CAT28LV64 is a low voltage, low power, CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with auto-
clear and VCC power up/down write protection eliminate
additional timing and protection hardware. DATA Polling
and Toggle status bit signal the start and end of the self-
timed write cycle. Additionally, the CAT28LV64 features
hardware and software write protection.
The CAT28LV64 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
VCC
CE
OE
WE
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
A0–A4
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
8,192 x 8
E2PROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1010, Rev. D

PagesPages 12
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