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Wisdom technologies - N-Channel MOSFET

Numéro de référence WFU4N60
Description N-Channel MOSFET
Fabricant Wisdom technologies 
Logo Wisdom technologies 





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WFU4N60 fiche technique
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge : 15 nC (Typ.)
BVDSS=600V,ID=4A
Lower RDS(on) : 2.5(Max) @VG=10V
100% Avalanche Tested
    TO252 
        TO251 
 
GGate,DDrain,SSourse 
 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current -continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFU/D4N60
600
4
1.8
±30
240
4
44
-55 ~ +150
300
Thermal Characteristics 
Symbol
Parameter
Typ.
RθJC
Thermal Resistance,Junction to Case
--
RθCA
Thermal Resistance,Junction to Ambient*
--
RθJA Thermal Resistance,Junction to Ambient
--
*When mounted on the minimum pad size recommended (PCB mounted)
Max
2.56
50
110
Units
V
A
A
V
mJ
A
W
Units
/W
/W
/W
www.wisd om-technolo gies.com
    Rev.A0,August , 2010 | 
1 
 

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