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PDF BF9028DND-GE Data sheet ( Hoja de datos )
| Número de pieza | BF9028DND-GE | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect
Transistor, which is applied to electronic systems as a power
switch. This device has ESD-protection and low resistance
characteristics.
Features
z VDS=24 V
z ID=6 A
z Low on-state resistance
RDS (on) < 19.5 mΩ (VGS=4.5V)
RDS (on) < 20 mΩ (VGS=3.8V)
RDS (on) < 26 mΩ (VGS=3.0V)
RDS (on) < 30 mΩ (VGS=2.5V)
Absolute Maximum Ratings(TC = 25℃)
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
PD Power Dissipation TC = 25°C
TJ,Tstg Operating and Storage Temperature Range
(Note a)
Value
24
6
24
±10
2.0
-55 to +150
Unit
V
A
A
V
W
℃
Ordering Information
Part Number
BF9028DND-GE
Package
DFN2*5-6L
Packaging
Tape&Reel
Datasheet
TS-MOS-PD-0009 Rev.A/1
Page 1 of 8
1 page  
BYD Microelectronics Co., Ltd.
Figure 7 Capacitance
1C0(0pF0) 0
1000
CiSS
100 CrSS
10
CoSS
1
0 4 8 12 16 VDS(2V0)
Figure 9 Safe Operating Area
ID1(0A0)
10
Operation in This Areais
Limited by R DS(on)
1
Notes:
0.1 1. TC = 25 ℃
2. TJ = 150 ℃
3. Single Pulse
0.01
0.1
1
10
100us
1ms
10ms
100ms
DC
VDS1(0V0)
Figure 11 Rdson vs. VGS
RDS1(o2n0)
(mΩ)
96
72 ID=3A
48
24
0
1 2 3 4 5 VGS(V6)
BF9028DND-GE
Figure 8 Gate Charge
VGS(V)
4
3
VDS=19V
ID=6A
2
1
0
0 2 4 6 8 Qg(n1C0)
Figure 10 Maximum IDSS Vs. Case
Temperature
ID(A6)
4.8
3.6
2.4
1.2
0
25 50 75 100 125 Tc(1℃5)0
Datasheet
TS-MOS-PD-0009 Rev.A/1
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BF9028DND-GE.PDF ] | |
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