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Número de pieza | BF90315SNS | |
Descripción | N-Channel MOSFET | |
Fabricantes | BYD | |
Logotipo | ||
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BF90315SNS
30V N-Channel MOSFET
General Description
The BF90315SNS is a Single N-channel MOS Field Effect
Transistor, which uses advanced trench technology
to provide excellent RDS(ON) and low gate charge.
It is applied in the electronic systems as a power switch.
Features
z VDS=30 V
z ID=11.6 A
z Low on-state resistance
RDS (on) < 15 mΩ (VGS=10V)
RDS (on) < 22 mΩ (VGS=4.5V)
Absolute Maximum Ratings(TC = 25℃)
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
PD Power Dissipation TC = 25°C
TJ,Tstg Operating and Storage Temperature Range
(Note a)
Value
30
11.6
48
±20
2
-55 to +150
Unit
V
A
A
V
W
℃
Ordering Information
Part Number
BF90315SNS
Package
SOP8
Packaging
Tape & Reel
Datasheet
TS-MOS-PD-0021
Rev.A/0
Page 1 of 7
1 page BYD Microelectronics Co., Ltd.
Figure 12 Normalized Maximum Transient Thermal Impedance
1
BF90315SNS
0.1
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC +
0.001
0.01
0.1
1
t1, Square Wave Pulse Duration [sec]
10
100
1000
Datasheet
TS-MOS-PD-0021
Rev.A/0
Page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BF90315SNS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF90315SNS | N-Channel MOSFET | BYD |
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