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BYD - N-Channel MOSFET

Numéro de référence BF960NF06
Description N-Channel MOSFET
Fabricant BYD 
Logo BYD 





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BF960NF06 fiche technique
BYD Microelectronics Co., Ltd.
BF960NF06
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low
gate drive requirement.
Features
z VDS =60 V
z ID =60A
z Typical RDS(ON) =10m (VGS=10V,ID=30A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
Note1
Note2
Note1
Value
60
60
240
±20
215
38
138
-55 to +150
300
Unit
V
A
A
V
mJ
A
W
Datasheet
TS-MOS-PD-0053 Rev.A/02011-3-23
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