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PDF BF90880SNL Data sheet ( Hoja de datos )
| Número de pieza | BF90880SNL | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF90880SNL
80V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low
gate drive requirement.
Features
z VDS =80 V
z ID =80A
z Typical RDS(ON) =8m Ω (VGS=10V,ID=40A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
（Note1）
（Note2）
（Note1）
Value
80
80
320
±20
1200
33
178
-55 to +150
300
Unit
V
A
A
V
mJ
A
W
℃
℃
Datasheet
TS-MOS-PD-0066 Rev.A/0
Page 1 of 6
1 page  
BYD Microelectronics Co., Ltd.
Package Drawing
D
Φ
BF90880SNL
A
C1
b1
A1
b
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
Φ
e
e1
Dimensions In Millimeters
Min Max
4.45 4.55
2.38 2.42
0.70 0.90
1.42 1.62
0.45 0.55
1.25 1.35
9.85 9.95
9.11 9.29
12.85
12.95
2.540TYP
5.04 5.12
2.77 2.83
12.98
13.18
2.97 3.03
3.58 3.62
C
Dimensions In Inches
Min Max
0.175
0.179
0.093
0.095
0.028
0.035
0.056
0.064
0.018
0.022
0.049
0.053
0.388
0.392
0.359
0.366
0.506
0.510
0.100TYP
0.198
0.202
0.109
0.111
0.511
0.519
0.117
0.119
0.141
0.143
Datasheet
TS-MOS-PD-0066 Rev.A/0
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF90880SNL.PDF ] | |
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