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Numéro de référence | BF96N60 | ||
Description | N-Channel MOSFET | ||
Fabricant | BYD | ||
Logo | |||
BYD Microelectronics Co., Ltd.
BF96N60/ BF96N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =5.5A
z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A)
z CRSS (typical 7.0pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR Repetitive Avalanche Energy
(Note1)
dv/dt
Peak Diode Recovery dv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF96N60L
BF96N60
600
5.5
22
±30
190
5.5
12.5 4
5
125 40
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0015 Rev.A/5
Page 1 of 11
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Pages | Pages 11 | ||
Télécharger | [ BF96N60 ] |
No | Description détaillée | Fabricant |
BF96N60 | N-Channel MOSFET | BYD |
BF96N60L | N-Channel MOSFET | BYD |
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