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BF910N60L fiches techniques PDF

BYD - N-Channel MOSFET

Numéro de référence BF910N60L
Description N-Channel MOSFET
Fabricant BYD 
Logo BYD 





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BF910N60L fiche technique
BYD Microelectronics Co., Ltd.
BF910N60/BF910N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =10A
z RDS(ON) =0.65 TYP(VGS=10V,ID=5.0A)
z Low CRSS (typical 16pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF910N60L
BF910N60
600
10
40
±30
490
10
13.9 4.8
5.0
139 48
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Datasheet
TS-MOS-PD-0005 Rev.A/4
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