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Numéro de référence | BF912N60L | ||
Description | N-Channel MOSFET | ||
Fabricant | BYD | ||
Logo | |||
BYD Microelectronics Co., Ltd.
BF912N60/ BF912N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =12A
z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A)
z Low CRSS (typical 17pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS Single PulseAvalancheEnergy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF912N60L
BF912N60
600
12
48
±30
628
12
25 5
5.0
250 50
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0014 Rev.A/4
Page1 of 11
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Pages | Pages 11 | ||
Télécharger | [ BF912N60L ] |
No | Description détaillée | Fabricant |
BF912N60 | N-Channel MOSFET | BYD |
BF912N60L | N-Channel MOSFET | BYD |
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