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DG3N80 fiches techniques PDF

DGME - N-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DG3N80
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricant DGME 
Logo DGME 





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DG3N80 fiche technique
DG3N80
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号:V1.0
产品概述 General Description
DG3N80N沟道增强型场效应晶体管,应用了东光微电的相关专利技术,采用自对准平面
工艺及先进的终端耐压技术,降低了导通损耗,提高了开关特性,增强了雪崩耐量。该产
品能应用于多种功率开关电路,使得电源能效更高,系统更加小型化。
DG3N80 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s
proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The transistor can be used in various power switching
circuit for higher efficiency and system miniaturization.
主要参数 MAIN CHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
800
3.0
4.8
12
V
A
pF
符号 Symbol
封装 Package
1 /8

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