|
|
PDF MBQ40T120FES Data sheet ( Hoja de datos )
| Número de pieza | MBQ40T120FES | |
| Descripción | IGBT | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBQ40T120FES (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MBQ40T120FES
High speed FieldStop Trench IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides low VCE(SAT),
high switching performance and excellent quality.
This device is for PFC, UPS & Inverter applications.
Applications
PFC
UPS
Inverter
Features
High Speed Switching & Low Power Loss
VCE(sat) = 2.0V @ IC = 40A
High Input Impedance
trr = 100ns (typ.)
Ultra Soft, fast recovery anti-parallel diode
Ultra narrowed VF distribution control
Positive Temperature coefficient for easy paralleling
TO-247
G
C
E
Absolute Maximum Ratings
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Pulsed collector current, pulse time limited by Tjmax
Diode forward current @ TC = 100°C
Diode pulsed current, Pulse time limited by Tjmax
Power dissipation
Short circuit withstand time
VCE = 600V, VGE = 15V, TC = 150°C
Allowed number of short circuit < 1000
Time between short circuits ≥ 1.0s
Operating Junction and storage temperature range
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Thermal Characteristics
Characteristics
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Jun. 2015 Revision 0.0
1
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
tsc
TJ, Tstg
Rating
1200
±20
80
40
160
40
160
357
142
10
-55~150
Unit
V
V
A
A
A
A
A
W
W
μs
°C
Symbol
RθJA
RθJC
RθJC
Rating
40
0.35
0.8
Unit
°C/W
MagnaChip Semiconductor Ltd.
1 page  
5
Common Emitter
V = 600V
CC
V = 15V
GE
4
R = 10ohm
G
T = 150C
C
3
Eon
Common Emitter
V = 15V
GE
R = 10ohm
G
T = 25C
100
C
T = 150C
C
td(on)
tr
2
Eoff
1
20 30 40 50 60
Collector Current, I [A]
C
Fig.13 Switching Loss-Collector Current
td(off)
100
tf
10
20
Common Emitter
V = 15V
GE
R = 10ohm
G
T = 25C
C
T = 150C
C
30 40 50
Collector Current, I [A]
C
60
Fig.15 Typical Turn off-Collector Current
10
20 30 40 50
Collector Current, I [A]
C
Fig.14 Typical Turn on-Collector Current
60
100
T = 25C
C
T = 150C
C
10
1
0.1
0123
Forward Voltage, V [V]
F
Fig.16 Diode Forward Characteristics
4
T = 25C
C
T = 150C
C
di/dt=200A/us
di/dt=100A/us
100 di/dt=200A/us
di/dt=100A/us
20 30 40 50 60
Forward Current, I [A]
F
Fig.17 Typical Turn off-Collector Current
100
50us
100us
10 200us
500us
1
DC
0.1
1 10 100 1000
Collector-Emitter Voltage,V [V]
CE
Fig.18 Forward Bias Safe Operating Area
Jun. 2015 Revision 0.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MBQ40T120FES.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBQ40T120FES | IGBT | MagnaChip |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |