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PDF MBQ25T120FESC Data sheet ( Hoja de datos )
| Número de pieza | MBQ25T120FESC | |
| Descripción | IGBT | |
| Fabricantes | MagnaChip | |
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MBQ25T120FESC
High speed Fieldstop Trench IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides low VCE(SAT),
high switching performance and excellent quality.
This device is for PFC, UPS & PV inverter and Welder
Applications.
Applications
PFC
UPS
Welder
PV Inverter
Features
High Speed Switching & Low VCE(sat) Loss
VCE(sat) = 2.0V @IC = 25A
High Input Impedance
trr = 100ns (typ.) @ diF/dt = 500A/ μs
Maximum junction temperature 175°C
Pb-free ; RoHS compliant
Ultra Soft, fast recovery anti-parallel diode
Ultra Narrowed VF distribution control
Positive Temperature coefficient for easy paralleling
TO-247
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tjvjmax
Turn off safe operating area VCE ≤ 1200V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time
VCC ≤ 600V, VGE = 15V, Tvj = 175°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
TC=25°C
TC=100°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Sep. 2015 Revision 1.0
1
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
1200
50
25
100
100
25
12.5
100
±20
348
174
10
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.43
1.55
Unit
°C/W
MagnaChip Semiconductor Ltd.
1 page  
7
6 max.
typ.
5
min.
4
Cies
1000
Coes
Cres
100
V = 0V
GE
f = 1MHz
3
25 50 75 100 125 150 175
Junction Temperature, T [C]
J
Fig.7 Threshold Voltage-Junction Temperature
10
0 5 10 15 20 25 30
Collector-Emitter Voltage, V [V]
CE
Fig.8 Typical Capacitance
16
V = 240V
CC
14
V = 960V
CC
12
10
8
6
4
2
0
0 50 100 150 200
Total Gate Charge, Q [nC]
G
Fig.9 Typical Gate Charge
250
120
100
V = 600V
CC
V = 15V
GE
R = 23ohm
G
T = 175'C
C
80
60
td(on)
40 tr
20
0
10
20 30
Collector Current, I [A]
C
40
50
Fig.10 Typical Turn on-Collector Current
1000
V = 600V
CC
V = 15V
GE
R = 23ohm
G
T = 175'C
C
100
td(off)
tf
10
10
20 30
Collector Current, I [A]
C
40
50
Fig.11 Typical Turn off-Collector Current
6
V = 600V
CC
V = 15V
GE
R = 23ohm
5
G
T = 175'C
C
4
3
Eon
2
Eoff
1
0
10
20 30
Collector Current, I [A]
C
40
50
Fig.12 Switching Loss-Collector Current
Sep. 2015 Revision 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MBQ25T120FESC.PDF ] | |
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