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PDF MBQ40T65FESC Data sheet ( Hoja de datos )
| Número de pieza | MBQ40T65FESC | |
| Descripción | IGBT | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides high switching
series and excellent quality.
This device is for PFC, UPS & Inverter applications.
TO-247
MBQ40T65FESC
650V Field Stop IGBT
Features
High Speed Switching & Low Power Loss
VCE(sat) = 1.95V @ IC = 40A
Eoff = 0.3mJ @ TC = 25°C
High Input Impedance
trr = 80ns (typ.) @diF/dt = 1000A/ μs
Maximum junction temperature 175°C
Applications
PFC
UPS
PV Inverter
Welder
IH Cooker
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tjvjmax
Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time
VCC ≤ 400V, VGE = 15V, Tvj = 150°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
TC=25°C
TC=100°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Sep. 2015 Revision 0.0
1
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
650
80
40
160
160
40
20
160
±20
341
170
5
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.44
1.2
Unit
°C/W
MagnaChip Semiconductor Ltd.
1 page  
Sep. 2015 Revision 0.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MBQ40T65FESC.PDF ] | |
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