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PDF CEM7808 Data sheet ( Hoja de datos )

Número de pieza CEM7808
Descripción Enhancement Mode Field Effect Transistor
Fabricantes CET 
Logotipo CET Logotipo



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CEM7808
Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY
FEATURES
30V, 6.2A, RDS(ON) = 33m@VGS = 10V.
RDS(ON) = 60m@VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 55m@VGS = -10V.
RDS(ON) = 80m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
P1S
P2S
P1G
P2G
N1D
P1D
N2D
P2D
N1G
N2G
P1G
8
N1S
N2S
P1S N2D
P2S P2D
76
P2G
5
SO-8
1
1234
N1G
N1D
P1D
N1S
N2S
N2G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
VDS 30 -30
VGS ±20 ±20
Drain Current-Continuous
ID 6.2 -4.8
Drain Current-Pulsed a
IDM 24.8 -19.2
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Jun
http://www.cet-mos.com

1 page




CEM7808 pdf
P-CHANNEL
6.0
4.8
-VGS=10,8,6,4V
3.6
2.4 -VGS=3V
1.2
0
0 0.3 0.6 0.9 1.2 1.5 1.8
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1500
1250
Ciss
1000
750
500
250 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5
CEM7808
10
TJ=125 C
8
6
4
2 25 C
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-5A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current

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