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Numéro de référence | SBLB2030CT | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
1 Page
Production specification
Schottky Barrier Rectifier
SBLB2030CT-SBLB20100CT
FEATURES
z Metal-Semicondutcor Junction With Guard Ring.
z Epitaxial Construction.
Pb
z
Lead-free
Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capacity.
z For Use In Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
z The Plastic Material Carries U/L Recognition 94V-0.
TO-263
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
SBLB SBLB SBLB SBLB SBLB SBLB SBLB
2030 2035 2040 2045 2050 2060 2080
CT CT CT CT CT CT CT
VRRM
Recurrent Peak Reverse
Voltage
30 35 40 45 50 60 80
SBLB
20100
CT
100
Unit
V
VRMS
RMS Voltage
21 25 28 32 35 42 56 70 V
VDC DC Blocking Voltage
30 35 40 45 50 60 80 100 V
IF(AV)
Average Forward Rectified
Current @TA=100℃
20 A
Peak Forward SurgeCurrent
8.3ms
Single
Half
IFSM Sine-wave Superimosed on 250 A
Rated Load
RθJC
Thermal Resistance(Note1)
1.5 ℃/W
Operating Junction
Tj Temperature Range
-55 to +125
℃
Tstg StorageTemperature Range
-55 to +150
℃
Note:1.Thermal resistance junction to case.
O003
Rev.A
www.gmicroelec.com
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Pages | Pages 3 | ||
Télécharger | [ SBLB2030CT ] |
No | Description détaillée | Fabricant |
SBLB2030CT | Schottky Barrier Rectifier ( Diode ) | Galaxy Microelectronics |
SBLB2030CT | Schottky Rectifier ( Diode ) | General Semiconductor |
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