|
|
PDF HY3610P Data sheet ( Hoja de datos )
| Número de pieza | HY3610P | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY3610P (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 100V/160A
RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
D
Applications
• Switching application
• Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
P
HY3610
YYÿ XXXJWW G
Package Code
P : TO220-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com
1 page  
HY3610P
Typical Operating Characteristics (Cont.)
Output Characteristics
320
V = 6,7,8,9,10V
GS
280
240 5.5V
200
160
120
5V
80
40 4.5V
0
0 1.0 2.0 3.0 4.0 5.0 6.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
7.0
6.5
6.0
5.5 VGS =10V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0
40 80 120 160 200
ID - Drain Current (A)
Drain-Source On Resistance
I =80A
DS
12
10
8
6
4
2
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi-semi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HY3610P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY3610P | N-Channel Enhancement Mode MOSFET | HOOYI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |