|
|
Numéro de référence | RBR5LAM30A | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RBR5LAM30A
Data Sheet
lApplications
General rectification
lFeatures
1) Small power mold type
(PMDTM)
2) High reliability
3) Low VF
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
(2)
1.50±0.20
0.95±0.10
lStructure (1) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lTaping Dimensions (Unit : mm)
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
(2) Anode
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
IO
IFSM
Operating junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, Tc=90ºC Max.
60Hz half sin wave, 1cycle,
non-repetitive at Ta=25ºC
-
-
Limits Unit
30 V
30 V
5A
75 A
150 °C
-55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=5.0A
VR=30V
Min. Typ. Max. Unit
- - 0.54 V
- - 100 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.05 - Rev.A
|
|||
Pages | Pages 8 | ||
Télécharger | [ RBR5LAM30A ] |
No | Description détaillée | Fabricant |
RBR5LAM30A | Schottky Barrier Diode | ROHM Semiconductor |
RBR5LAM30B | Schottky Barrier Diode | ROHM Semiconductor |
RBR5LAM30BTF | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |