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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBR2LAM60A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBR2LAM60A fiche technique
Schottky Barrier Diode
RBR2LAM60A
Data Sheet
lApplications
General rectification
lFeatures
1) Small power mold type
(PMDTM)
2) High reliability
3) Low VF
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
(2)
1.50±0.20
0.95±0.10
lStructure (1) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lTaping Dimensions (Unit : mm)
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
(2) Anode
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
IO
IFSM
Operating junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, Tc=120ºC Max.
60Hz half sin wave, 1cycle,
non-repetitive at Ta=25ºC
-
-
Limits Unit
60 V
60 V
2A
40 A
150 °C
-55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=2.0A
VR=60V
Min. Typ. Max. Unit
- - 0.65 V
- - 75 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.05 - Rev.A

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