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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBR10T40ANZ
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBR10T40ANZ fiche technique
Schottky Barrier Diode
RBR10T40ANZ
lApplication
Switching power supply
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Data Sheet
lStructure
lFeatures
1) Cathode common dual type
2) High reliability
3) Low VF
1.2
1.3
0.8
1
2.6±0.5
lConstruction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
0.75±00..015
1 Manufacture date
(1) (2) (3)
Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
Storage Temperature
VRM
VR
Io
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=130°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
40 V
40 V
10 A
50 A
150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=5A
Reverse Current
IR VR=40V
Thermal Resistance
Rth(j-c)
Junction to Case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
Min. Typ. Max. Unit
- - 0.62 V
- - 120 mA
- - 2 °C/W
2016.08 - Rev.A

PagesPages 8
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