|
|
Numéro de référence | RBR30T40ANZ | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RBR30T40ANZ
Application
General rectification
Dimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Datasheet
Structure
Features
1) Cathode common dual type
2) High reliability
3) Low VF
1.2
1.3
0.8
1
2.6±0.5
Construction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
0.75±00..015
1 : Manufacture date
(1) (2) (3)
Anode Cathode Anode
Package Dimensions (Unit : mm)
7
540
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM
VR
Io
IFSM
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=95°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
40 V
40 V
30 A
100 A
150 °C
55 to 150 °C
Electrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=15A
Reverse Current
IR VR=40V
Thermal Resistance
Rth(j-c)
Junction to Case
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
Min. Typ. Max. Unit
- - 0.62 V
- - 360 A
- - 2 °C/W
2016.08 - Rev.A
|
|||
Pages | Pages 8 | ||
Télécharger | [ RBR30T40ANZ ] |
No | Description détaillée | Fabricant |
RBR30T40ANZ | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |