DataSheetWiki


RBR30T30ANZ fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBR30T30ANZ
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RBR30T30ANZ fiche technique
Schottky Barrier Diode
RBR30T30ANZ
lApplication
General rectification
lDimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Data Sheet
lStructure
lFeatures
1) Cathode common dual type
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture date
(1) (2) (3)
Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
Storage Temperature
VRM
VR
Io
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=110°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
30 V
30 V
30 A
100 A
150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=15A
Reverse Current
IR VR=30V
Thermal Resistance
Rth(j-c)
Junction to Case
Min. Typ. Max. Unit
- - 0.55 V
- - 300 mA
- - 2 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.08 - Rev.A

PagesPages 9
Télécharger [ RBR30T30ANZ ]


Fiche technique recommandé

No Description détaillée Fabricant
RBR30T30ANZ Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche