|
|
Numéro de référence | RBR20NS60A | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RBR20NS60A
Data Sheet
lApplication
Switching power supply
lDimensions (Unit : mm)
(2)
lLand size figure (Unit : mm)
11
lFeatures
1) Cathode common dual type
2) High reliability
3) Low VF
BR20NS
60A
1
(1) (3)
9.9
2.5
2.54
TO-263S
lStructure
ROHM : TO-263S
JEITA : SC-83
1 : Manufacture date
2.54
(2) Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM
VR
Io
IFSM
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=115°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
60 V
60 V
20 A
100 A
150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=10A
Reverse Current
IR VR=60V
Thermal Resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.64 V
- - 400 mA
- - 2 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.06 - Rev.A
|
|||
Pages | Pages 7 | ||
Télécharger | [ RBR20NS60A ] |
No | Description détaillée | Fabricant |
RBR20NS60A | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |