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PDF RBR20BM40A Data sheet ( Hoja de datos )
| Número de pieza | RBR20BM40A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RBR20BM40A
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low VF
1 1.6 1.6
ROHM : TO-252
JEITA : SC-63
1 : Manufacture date
TO-252
2.3 2.3
lStructure
Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Anode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM
VR
Io
IFSM
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=53°C Max.
60Hz half sin wave, Non-repetitive
at Ta=25°C, 1cycle, per diode
-
-
Limits Unit
40 V
40 V
20 A
100 A
150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=10A
Reverse Current
IR VR=40V
Thermal Resistance
Rth(j-c)
Junction to Case
Min. Typ. Max. Unit
- - 0.58 V
- - 360 mA
- - 6 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.A
1 page  
RBR20BM40A
lElectrical Characteristic Curves
Data Sheet
100
Rth(j-a)
10
Rth(j-c)
1
IM=100mA
IF=20A
time
1ms300ms
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
60
IO
50 0A
0V
VR t
40 T D=t/T
VR=VRM/2
Tj=150°C
30
20 DC Sin(θ=180)
10 D = 1/2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
60
50
40 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
30
D = 1/2
20
10 Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/5
2016.02 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RBR20BM40A.PDF ] | |
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