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RBQ20T45ANZ fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBQ20T45ANZ
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBQ20T45ANZ fiche technique
Schottky Barrier Diode
RBQ20T45ANZ
lApplication
General rectification
lFeatures
1) Cathode common type.
2) Low IR
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
1
1.2
1.3
0.8
(1) (2) (3)
ROHM TO220FN
1 Manufacture Date
0.7±0.1
0.05
2.6±0.5
lPackage Dimensions (Unit : mm)
7 540
Data Sheet
lStructure
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
45
45
20
100
150
-40 to +150
Unit
V
V
A
A
°C
°C
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
VF -
IR -
Typ. Max.
- 0.65
- 300
Unit Conditions
V IF=10A
mA VR=45V
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.09 - Rev.A

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