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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB715WM
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB715WM fiche technique
Schottky Barrier Diode
RB715WM
Data Sheet
lApplication
High speed switching
lFeatures
1) Ultra small mold type
(EMD3F)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
1.60±0.1
0.70±0.10
0.26
+0.10
-0.05
Each lead has
same dimensions
(3)
lLand Size Figure (Unit : mm)
0.5 0.5
0.7
3D
(1)
(0.5) (0.5)
1.00±0.10
(2)
ROHM : EMD3F
JEDEC : SOT-416FL
JEITA : SC-89
: Year, week and factory
00.10
EMD3F 0.6
0.6
lStructure
(3)
(1) Anode
(2) Anode
(3) Cathode
(1) (2)
lTaping Dimensions (Unit : mm)
TL
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
40 V
Average forward rectified current
IO
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, per diode
30
mA
Non-repetitive forward current surge peak IFSM
60Hz half sin wave,non-repetitive at Ta=25ºC,
1cycle, per diode
0.2
A
Operating Junction Temperature
Tj
-
125 °C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
Ct
Conditions
IF=1mA
VR=10V
f=1MHz, VR=1V
Min. Typ. Max. Unit
- - 0.37 V
- - 1.0 mA
- 2 - pF
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.07 - Rev.A

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