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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB558W
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB558W fiche technique
Data Sheet
Shottky barrier diode
RB558W
Applications
Low current rectification
Dimensions (Unit : mm)
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
1.6±0.2
0 .3 ±0.1
    0.05
(3)
0.15± 0.05
0.2±0 .1
  - 0.05
(2)
0.5 0.5
1.0± 0.1
(1)
0~ 0.1
0.55± 0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
     00
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.6
EMD3
Structure
0.6
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VR
Io
IFSM
Tj
Tstg
Limits
30
100
500
125
40 to 125
Unit
V
mA
mA
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1 - - 0.35
VF2 - - 0.49
IR - - 10
Unit Conditions
V IF=10mA
V IF=100mA
μA VR=10V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B

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