|
|
Numéro de référence | RB558W | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Data Sheet
Shottky barrier diode
RB558W
Applications
Low current rectification
Dimensions (Unit : mm)
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
1.6±0.2
0 .3 ±0.1
0.05
(3)
0.15± 0.05
0.2±0 .1
- 0.05
(2)
0.5 0.5
1.0± 0.1
(1)
0~ 0.1
0.55± 0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
00
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.6
EMD3
Structure
0.6
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VR
Io
IFSM
Tj
Tstg
Limits
30
100
500
125
40 to 125
Unit
V
mA
mA
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1 - - 0.35
VF2 - - 0.49
IR - - 10
Unit Conditions
V IF=10mA
V IF=100mA
μA VR=10V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
|
|||
Pages | Pages 4 | ||
Télécharger | [ RB558W ] |
No | Description détaillée | Fabricant |
RB558VA150 | Schottky Barrier Diode | ROHM Semiconductor |
RB558W | Schottky Barrier Diode | ROHM Semiconductor |
RB558WM | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |