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PDF SF1005-G Data sheet ( Hoja de datos )
| Número de pieza | SF1005-G | |
| Descripción | SMD Super Fast Recovery Rectifiers | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SF1005-G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SMD Super Fast Recovery Rectifiers
SF1005-G Thru. SF1060-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 10 Amp
RoHS Device
Comchip
SMD Diode Specialist
Features
-Low power loss,high efficiency.
-Low power voltage,high current capability.
-High surge capacity.
-Super fast recouery time, high voltage.
-In compliance with EU RoHS 2002/95/EC directives.
-Exeeds environmental standards of MIL-S-19500/228
Mechanical data
-Epoxy: UL 94-V0 rated flame retardant.
-Case: ITO-220AC molded plastic.
-Terminals: Lead solderable per MIL-STD-750, method
2026.
-Polarity: As marked
-Weight: 1.56 grams approx.
-Standard packaging: Any
ITO-220AB
0.406(10.30)
0.386( 9.80)
0.138(3.50)
0.122(3.10)
0.118(3.00)
0.102(2.60)
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.106(2.70)
0.04 MAX
(1.0)
0.059(1.50)
0.043(1.10)
0.030(0.76)
0.020(0.51)
0.610(15.50)
0.571(14.50)
0.157(4.00)
0.142(3.60)
0.571(14.50)
0.531(13.50)
0.112(2.84)
0.088(2.24)
Dimensions in inches and (millimeter)
0.030(0.76)
0.020(0.51)
0.114(2.90)
0.098(2.50)
Maximun Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbol
SF
1005-G
SF
1010-G
SF
1020-G
SF
1030-G
SF SF
1040-G 1050-G
SF
1060-G
Unit
Maximum Reverse Peak Repetitive Voltage
VRRM
50
100 150 200 300 400 600 V
Maximum RMS Bridge Input Voltage
VRMS
35
70 105 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 600 V
Maximum Average Forward
Rectified Current @Tc=75°C
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC METHOD)
Maximum Peak Forward Voltage at 10.0A ,
per element
Maximum DC Reverse Current @TJ=25°C
At Rate DC Blodking voltage
@TJ=100°C
I(AV)
IFSM
VF
IR
0.95
10
150
1
500
1.30
A
1.70
A
V
μA
Max. Reverse recovery time ( Note 2)
Trr
25
35 nS
Typical Junction capacitance (Note 1)
CJ
62 PF
Typical Thermal Resistance
RθJC
3 °C/W
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC.
2. Reverse recovery test conditions: IF=0.5A, IR=1A, IRR=0.25A
3. Both bonding and chip structure available.
QW-BS006
Comchip Technology CO., LTD.
REV:A
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SF1005-G.PDF ] | |
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