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Numéro de référence | RB520AS-30 | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
RB520AS-30
Schottky Barrier Diode
●Outline
VR 30 V
Io 200 mA
IFSM 1 A
●Features
High reliability
Small mold type
Low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Small current rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
Basic Ordering Unit(pcs)
8
8000
Epitaxial planar
Taping Code
T2R
Marking
B
●Absolute Maximum Ratings (Tc = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
VRM Duty≦0.5
VR Reverse direct voltage
30 V
30 V
Average rectified forward current
Io
Glass epoxy mounted、60Hz half sin
waveform、resistive load
200
mA
Peak forward surge current
IFSM
60Hz half sin waveform、
Non-repetitive、one cycle、Ta=25℃
Junction temperature
Tj -
Storage temperature
Tstg -
1
125
-40 ~ 125
A
℃
℃
●Characteristics (Tj = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
※Caution:static electricity
VF
IF=200mA
- - 0.60 V
IR
VR=10V
- - 1 μA
Attention
www.rohm.com
© 2016 ROHMCo., Ltd.All rights reserved.
1/4
2016/09/28_Rev.001
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Pages | Pages 8 | ||
Télécharger | [ RB520AS-30 ] |
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