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RB520AS-30 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB520AS-30
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB520AS-30 fiche technique
RB520AS-30
Schottky Barrier Diode
                                                  Outline
VR 30 V
Io 200 mA
IFSM 1 A
Features
High reliability
Small mold type
Low VF
Inner Circuit
Data sheet
   
 
 
 
 
 
 
 
 
   
Application
Packaging Specifications
Small current rectification
Packing
Embossed Tape
Reel Size(mm)
180
Structure
Taping Width(mm)
Basic Ordering Unit(pcs)
8
8000
Epitaxial planar
Taping Code
T2R
Marking
B
Absolute Maximum Ratings (Tc = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
VRM Duty0.5
VR Reverse direct voltage
30 V
30 V
Average rectified forward current
Io
Glass epoxy mounted60Hz half sin
waveformresistive load
200
mA
Peak forward surge current
IFSM
60Hz half sin waveform
Non-repetitiveone cycleTa=25
Junction temperature
Tj -
Storage temperature
Tstg -
                            
1
125
-40 125
A
Characteristics (Tj = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Cautionstatic electricity
VF
IF=200mA
- - 0.60 V
IR
VR=10V
- - 1 μA
Attention
                                                                                        
www.rohm.com
© 2016 ROHMCo., Ltd.All rights reserved.
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  2016/09/28_Rev.001

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