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WCF20C60 fiches techniques PDF

Winsemi - Silicon Controlled Rectifiers

Numéro de référence WCF20C60
Description Silicon Controlled Rectifiers
Fabricant Winsemi 
Logo Winsemi 





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WCF20C60 fiche technique
Features
Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT(RMS)=20A)
Low On-State Voltage(1.3V(Typ.)@ITM)
Isolation Voltage(VISO=1500V AC)
WCF20C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the
application where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control system.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge on-state Current
I2t for Fusing
Critical rate of rise of on-state current
Condition
Half Sine Wave:TC =69 °C
180°conduction Angle
1/2 Cycle,60Hz,Sine
Wave Non-Repetitive
t=8.3ms
PGM Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation Over any 20ms period
IFGM
VRGM
VISO
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
A.C.1minute
Value
600
13
20
220
242
50
20
1
5
5.0
1500
-40~125
-40~150
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
Min Typ
--
--
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Max
2.7
60
Units
/W
/W

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