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PDF WCD6C60S Data sheet ( Hoja de datos )
| Número de pieza | WCD6C60S | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Winsemi | |
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Features
� Repetitive Peak Off-State Voltage : 600V
� R.M.S On-State Current ( IT(RMS)= 6 A )
� Low On-State Voltage (1.6V(Max.) @ ITM)
WCD6C60S
Sensitive Gate
Silicon Controlled Rectifiers
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current(180°
Conduction Angle)
Tc =110 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Tc =110 °C
ITSM Surge On-State Current
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
I2t I2t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
PGM Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM Forward Peak Gate Current
VRGM
Reverse Peak Gate Voltage
TJ Operating Junction Temperature
TSTG
Storage Temperature
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Ratings Units
600 V
3.8 A
6A
66 A
21 A2s
50 A/㎲
5W
0.5 W
2
5.0
-40~125 °C
-40~150 °C
A
V
°C
°C
Value
3.12
89
Units
℃/W
℃/W
Rev.A Sep.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-252 Package Dimension
WCD6C60S
Unit: mm
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WCD6C60S.PDF ] | |
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