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PDF WCD10C60 Data sheet ( Hoja de datos )
| Número de pieza | WCD10C60 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=10A)
� Low On-State Voltage(1.4V(Typ.)@ITM)
� Non-isolation Type
WCD10C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
IT(AV)
Repetitive Peak Off-State Voltage
Average On-State Current
Half Sine Wave:TC =111 °C
IT(RMS)
R.M.S On-State Current
180°conduction Angle
ITSM Surge on-state Current
1/2 Cycle,60Hz,Sine Wave
Non-Repetitive
I2t I2t for Fusing
t=8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
IFGM Forward Peak Gate Current
VRGM
TJ
Reverse Peak Gate Voltage
Operating Junction Temperature
TSTG
Storage Temperature
Value
600
6.4
10
110
60
50
5
0.5
2
5.0
-40~125
-40~150
Units
V
A
A
A
A2s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
- - 1.3 ℃/W
- - 60 ℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-252 Package Dimension
WCD10C60
Unit: mm
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WCD10C60.PDF ] | |
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