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Winsemi - NPN Power Transistor

Numéro de référence WBW3320
Description NPN Power Transistor
Fabricant Winsemi 
Logo Winsemi 





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WBW3320 fiche technique
WBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
TO3P
WBW3320
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TST G
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
TO247
WBW3320W
Value
Units
500
400
9
15
30
7
14
120
150
-55 ~ 150
V
V
V
A
A
A
A
W
Thermal Characteristics
Sym bol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.05
62.5
Units
/W
/W
Rev.A Jul.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.
T0 2-1

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