DataSheetWiki


WBP13005D fiches techniques PDF

Winsemi - NPN Power Transistor

Numéro de référence WBP13005D
Description NPN Power Transistor
Fabricant Winsemi 
Logo Winsemi 





1 Page

No Preview Available !





WBP13005D fiche technique
WBP13005D
High Voltage Fast -Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high Voltage, High speed
switching Characteristics required such as lighting
system ,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector pulse Current
IB Base Current
IBM Base peak Current
PC Total Dissipation
TJ Operation Junction Temperature
TSTG
Storage Temperature
Test conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
700
400
9.0
4
8
2
4
75
150
-55~150
Units
V
V
V
A
A
A
A
W
Thermal characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Value
3.12
8.9
Units
℃/W
℃/W
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

PagesPages 5
Télécharger [ WBP13005D ]


Fiche technique recommandé

No Description détaillée Fabricant
WBP13005D NPN Power Transistor Winsemi
Winsemi
WBP13005D1 NPN Power Transistor Winsemi
Winsemi

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche