(PDF) WBP3306 Datasheet - NPN Power Transistor

Número de pieza	WBP3306
Descripción	NPN Power Transistor
Fabricantes	Winsemi
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No Preview Available ! WBP3306 High Voltage Fast-Switching NPN Power Transistor Features ■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 (Note) Value 950 400 12 4 8 70 150 -65~150 Units V V V A A W ℃ ℃ Thermal Characteristics Symbol Parameter RӨJC RӨJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.8 62.5 Units ℃/W ℃/W Rev.A03 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 1 page WBP3306 Fig.9 Inductive Load Switching & RBSOA Test Circuit Fig.10 Inductive Load Switching &RBSOA Test Circuit Steady, keep you advance 5/6 5 Page

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PDF WBP3306 Data sheet ( Hoja de datos )