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Numéro de référence | RN779F | ||
Description | PIN diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Diodes
PIN diode
RN779F
RN779F
zApplications
For AGC, Switching.
zFeatures
1) Small mold type. (UMD3)
2) High-frequency resistance witch is small
and low capacity.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Ea同ch寸le法ad has same dimension
(3)
0.15±0.05
zLand size figure (Unit : mm)
1.3
0.65
(2)
(0.65) (0.65)
1.3±0.1
(1)
0~0.1
0.7±0.1
0.9±0.1
0.8MIN.
UMD3
zStructure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
2.25±0.1
0
4.0±0.1
φ0.5±0.05
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
Symbol
VR
IF
Tj
Tstg
Limits
50
50
150
-55 to +150
Unit
V
mA
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - - 1
Reverse current
IR - - 0.1
Capacitance between terminals
Ct
- - 0.9
High frequency resistance
Rf - - 7
Unit Conditions
V IF=10mA
µA VR=50V
pF VR=35V , f=1MHz
Ω IF=10mA,f=100MHz
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Pages | Pages 3 | ||
Télécharger | [ RN779F ] |
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