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PDF RB218T100FH Data sheet ( Hoja de datos )

Número de pieza RB218T100FH
Descripción Schottky Barrier Diode
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! RB218T100FH Hoja de datos, Descripción, Manual

Schottky Barrier Diode
RB218T100FH
Application
Switching power supply
Dimensions (Unit : mm)
4.5±00..31
Datasheet
AEC-Q101 Qualified
Structure
Features
1) Cathode common type
2) High reliability
3) Super low IR
10.0±
0.3
0.1
3.2±0.2
1
1.2
2.8±00..21
(1) (2) (3)
Anode Cathode Anode
Construction
Silicon epitaxial planar type
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
Storage temperature
VRM
VR
Io
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
Tc=115ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
-
-
Limits Unit
110 V
100 V
20 A
100 A
150 °C
55 to 150 °C
Electrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=10A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 7 A
- - 2 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.08 - Rev.A

1 page




RB218T100FH pdf
RB218T100FH
Electrical Characteristic Curves
Data Sheet
10
Rth(j-a)
Rth(j-c)
1
IM=100mA
IF=25A
time
0.1
0.001 0.01 0.1
1ms300s
1 10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
60
50
40 DC
D = 1/2
30
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
20
10 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
60
50
40 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
30 D = 1/2
20
10 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.08 - Rev.A

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